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Journal Articles

Influence of post-oxidation annealing on electrical characteristics in 6H-SiC MOSFETs

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu

Materials Science Forum, 338-342, p.1299 - 1302, 2000/00

no abstracts in English

JAEA Reports

Irradiation effect of transistor by Co-60 gamma ray and electron beam; Effects of dose rate and exposure temperatures

Hirao, Toshio; Yoshikawa, Masahito; Morita, Yosuke; *; *

JAERI-M 89-207, 128 Pages, 1989/12

JAERI-M-89-207.pdf:2.62MB

no abstracts in English

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